Surface Mount Gallium
Arsenide FET for Oscillators
Technical Data
ATF-13786
Features
鈥?Low Cost Surface Mount
Plastic Package
鈥?High f
MAX
:
60 GHz Typical
鈥?Low Phase Noise at 10 GHz:
-110 dBc/Hz @ 100 kHz Typical
鈥?Output Power at 10 GHz:
up to 10 dBm
鈥?Tape-and-Reel Packaging
Option Available
25
Description
Hewlett-Packard鈥檚 ATF-13786 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
device is designed for use in low
cost, surface mount oscillators
operating over the RF and
microwave frequency ranges. The
ATF-13786 has sufficient gain for
easy use as a negative R cell,
without excess gain that can lead
to unwanted oscillations and
mode jumping. The gate structure
used in the fabrication of this
device results in phase noise
performance superior to that of
most other MESFETs. These
features make this device
particularly well suited for low
power (< +10 dBm) commercial
oscillator applications such as are
encountered in DBS, TVRO, and
MMDS television receivers, or
hand-held transceivers operating
in the 900 MHz, 2.4 GHz, and
5.7 GHz ISM bands.
85 mil Plastic Surface
Mount Package
Pin Configuration
4
SOURCE
20
MSG
137
GATE
DRAIN
1
3
GAIN (dB)
15
MAG
10
S
21
MSG
2
SOURCE
5
0
1
5
FREQUENCY (GHz)
10
20
Insertion Power Gain, Maximum
Available Gain, and Maximum Stable
Gain vs. Frequency.
V
DS
= 3 V, I
DS
= 40 mA.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5-43
5965-8721E
1
2
3
