2鈥?8 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13100
Features
鈥?Low Noise Figure:
1.1 dB Typical at 12 GHz
鈥?High Associated Gain:
9.5 dB Typical at 12 GHz
鈥?High Output Power:
17.5 dBm Typical P
1 dB
at 12 GHz
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
The recommended mounting
procedure is to die attach at a
stage temperature of 300擄C using
a gold-tin preform under forming
gas. Assembly can be preformed
with either wedge or ball bonding
using 0.7 mil gold wire. See also
鈥淐hip Use鈥?in the APPLICATIONS
section.
Chip Outline
D
S
G
S
Description
The ATF-13100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
chip. This device is designed for
use in low noise, wideband
amplifier and oscillator applica-
tions in the 2-18 GHz frequency
range.
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
[1]
Optimum Noise Figure: V
DS
= 2.5 V, I
DS
= 20 mA
f = 8.0 GHz
f = 12.0 GHz
f = 15.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 15.0 GHz
Units
dB
dB
dB
dB
dB
dB
Min.
Typ. Max.
0.8
1.1
1.5
12.0
9.5
8.0
17.5
8.5
30
40
-3.0
55
50
-1.5
90
-0.8
1.2
G
A
Gain @ NF
O
; V
DS
= 2.5 V, I
DS
= 20 mA
9.0
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 40 mA
1 dB Compressed Gain; V
DS
= 4 V, I
DS
= 40 mA
Transconductance: V
DS
= 2.5 V, V
GS
= 0 V
Saturated Drain Current; V
DS
= 2.5 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2.5 V, I
DS
= 1 mA
f = 12.0 GHz dBm
f = 12.0 GHz
dB
mmho
mA
V
Note:
1. RF performance is determined by assembling and testing 10 samples per wafer.
5-33
5965-8694E
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