0.5 鈥?12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10136
Features
鈥?Low Noise Figure:
0.5 dB Typical at 4 GHz
鈥?Low Bias:
V
DS
= 2 V, I
DS
= 20 mA
鈥?High Associated Gain:
13.0 dB Typical at 4 GHz
鈥?High Output Power:
20.0 dBm Typical P
1 dB
at 4 GHz
鈥?Cost Effective Ceramic
Microstrip Package
鈥?Tape-and Reel Packaging
Option Available
[1]
Description
The ATF-10136 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operat-
ing in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
36 micro-X Package
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
dB
mmho
mA
V
70
70
-4.0
12.0
Min.
Typ. Max.
0.4
0.5
0.8
16.5
13.0
11.0
20.0
12.0
140
130
-1.3
180
-0.5
0.6
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 70 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
Transconductance: V
DS
= 2 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
Note:
1. Refer to PACKAGING section 鈥淭ape-and-Reel Packaging for Surface Mount Semiconductors.鈥?/div>
5-23
5965-8701E
AGILENT
1
2
3
