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ATF-10100-GP3 Datasheet

  • ATF-10100-GP3

  • 0.5-12 GHz Low Noise Gallium Arsenide FET

  • 4頁

  • AGILENT   AGILENT

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0.5 鈥?12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10100
Features
鈥?Low Noise Figure:
0.5 dB Typical at 4 GHz
鈥?Low Bias:
V
DS
= 2 V, I
DS
= 25 mA
鈥?High Associated Gain:
14.0 dB Typical at 4 GHz
鈥?High Output Power:
21.0 dBm Typical P
1 dB
at 4 GHz
chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Chip Outline
G
G
S
D
S
Description
The ATF-10100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
[1]
Optimum Noise Figure: V
CE
= 2 V, I
DS
= 25 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
dB
mmho
mA
V
80
70
-3.0
12.0
Min.
Typ. Max.
0.4
0.55
0.8
17.0
14.0
12.0
21.0
15.0
140
130
-1.3
180
-0.8
0.7
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 70 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
Transconductance: V
DS
= 2 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
Note:
1. RF performance is determined by packaging and testing 10 devices per wafer.
5-19
5965-8702E

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