音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

ATC100B120JT500XT Datasheet

  • ATC100B120JT500XT

  • RF Power Field Effect Transistor

  • 15頁

  • FREESCALE

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9045N
Rev. 0, 10/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with fre-
quencies up to 1000 MHz. The high gain and broadband performance of this
device makes it ideal for large - signal, common - source amplifier applications
in 28 volt base station equipment.
鈥?/div>
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 350 mA, P
out
= 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?22.1 dB
Drain Efficiency 鈥?32%
ACPR @ 750 kHz Offset 鈥?- 46 dBc in 30 kHz Channel Bandwidth
鈥?/div>
Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
鈥?/div>
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 350 mA,
P
out
= 16 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain 鈥?20 dB
Drain Efficiency 鈥?46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM 鈥?1.5% rms
GSM Application
鈥?/div>
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 350 mA, P
out
= 45 Watts,
Full Frequency Band (920 - 960 MHz)
Power Gain 鈥?20 dB
Drain Efficiency 鈥?68%
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Integrated ESD Protection
鈥?/div>
225擄C Capable Plastic Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
MRFE6S9045NR1
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Value
- 0.5, +66
- 0.5, + 12
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81擄C, 45 W CW
Case Temperature 79擄C, 10 W CW
Symbol
R
胃JC
Value
(2,3)
1.0
1.1
Unit
擄C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9045NR1
1
RF Device Data
Freescale Semiconductor

ATC100B120JT500XT相關(guān)型號(hào)PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！