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鈥?Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
鈥?Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time 鈥?20 碌s
Fast Sector Erase Time 鈥?300 ms
Dual-plane Organization, Permitting Concurrent Read While Program/Erase
鈥?Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
鈥?Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
鈥?Supports Reading and Programming from Any Sector by Suspending Erase of a
Different Sector
鈥?Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
鈥?30 mA Active
鈥?10 碌A(chǔ) Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
Top/Bottom Block Configuration
128-bit Protection Register
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鈥?/div>
鈥?/div>
16-megabit
Flash and
2-megabit/
4-megabit
SRAM Stack
Memory
AT52BR1672(T)
AT52BR1674(T)
Preliminary
SRAM
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2-megabit (128K x 16)/4-megabit (256K x 16)
2.7V to 3.3V V
CC
Operating Voltage
70 ns Access Time
Fully Static Operation and Tri-state Output
1.2V (Min) Data Retention
Industrial Temperature Range
Device Number
AT52BR1672(T)
AT52BR1674(T)
Flash Plane
Architecture
12M + 4M
12M + 4M
Flash
Configuration
16M (1M x 16)
16M (1M x 16)
SRAM
Configuration
2M (128K x 16)
4M (256K x 16)
Rev. 2604B鈥揝TKD鈥?9/02
1
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AT52BR1674T-85CI相關(guān)型號PDF文件下載
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英文版
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NUT MOUNTING HEX HS/PS/TS SER
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64 MBIT FLASH 16 MBIT PSRAM
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16M 2.7V 2MSRAM Single Bank Bottom Stacked Modules
ETC
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16-megabit Flash + 4-megabit SRAM Stack Memory
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16-megabit Flash + 4-megabit SRAM Stack Memory
ATMEL [ATM...
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英文版
16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
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英文版
16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
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