AT49LV080-20CC Datasheet

IC型號：
AT49LV080-20CC
PDF描述：
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memor...
文件大小：
204.47KB
PDF頁數(shù)：
12頁
芯片廠家：
ATMEL

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Features

鈥?/div>

Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)

Fast Read Access Time - 120 ns

Internal Program Control and Timer

16K bytes Boot Block With Lockout

Fast Erase Cycle Time - 10 seconds

Byte-By-Byte Programming - 30

碌s/Byte

Typical

Hardware Data Protection

DATA Polling For End Of Program Detection

Low Power Dissipation

- 25 mA Active Current

- 50

碌A(chǔ)

CMOS Standby Current

Typical 10,000 Write Cycles

Small Packaging

- 8 x 14 mm CBGA

Description

The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 mega-

bits of memory are organized as 1,024,576 words by 8 bits. Manufactured with At-

mel鈥檚 advanced nonvolatile CMOS technology, the devices offer access times to 120

ns with power dissipation of just 90 mW over the commercial temperature range.

When the device is deselected, the CMOS standby current is less than 50

碌A(chǔ).

The device contains a user-enabled "boot block" protection feature. Two versions of

the feature are available: the AT49BV/LV080 locates the boot block at lowest order

addresses ("bottom boot"); the AT49BVLV080T locates it at highest order addresses

("top boot").

(continued)

8-Megabit

(1M x 8)

Single 2.7-volt

Battery-Voltage

鈩?/div>

Flash Memory

AT49BV080

AT49BV080T

AT49LV080

AT49LV080T

Pin Configurations

Pin Name

A0 - A19

RESET

RDY/BUSY

I/O0 - I/O7

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

Ready/Busy Output

Data Inputs/Outputs

TSOP Top View

Type 1

CBGA Top View

RESET

A11

A10

I/O0

I/O1

I/O2

I/O3

GND

SOIC

VCC

A12

A13

A14

A15

A16

A17

A18

A19

RDY/BUSY

I/O7

I/O6

I/O5

I/O4

VCC

A3 I/O1 NC VCC I/O4 I/O7 NC

A1 I/O0 I/O2 GND I/O5 RY/BY WE

A0 I/O3 GND I/O6 OE NC

A9 RST CE A14 A16 A19

A7 A10 VCC A13 NC A18

A8 A11 NC A12 A15 A17

0812A鈥?/97

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AT49LV080-20CC Datasheet

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