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AT49HBV010-90TI Datasheet

  • AT49HBV010-90TI

  • 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Mem...

  • 11頁(yè)

  • ATMEL   ATMEL

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AT49(H)BV/(H)LV01
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 55 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30
碌s/Byte
typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
鈥?25 mA Active Current
鈥?50
碌A(chǔ)
CMOS Standby Current
鈥?/div>
Typical 10,000 Write Cycles
Description
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-
ries organized as 131,072 words of 8 bits each. Manufactured with Atmel鈥檚 advanced
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-
sipation of just 90 mW over the commercial temperature range. When the devices are
deselected, the CMOS standby current is less than 50
碌A(chǔ).
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not
require high input voltages for programming. Three-volt-only commands determine
the read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is
performed by erasing the entire 1 megabit of memory and then programming on a
byte by byte basis. The typical byte programming time is a fast 30
碌s.
The end of a
program cycle can be optionally detected by the DATA polling feature. Once the end
of a byte program cycle has been detected, a new access for a read or program can
begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
(continued)
1-Megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
鈩?/div>
Flash Memory
AT49BV010
AT49HBV010
AT49LV010
AT49HLV010
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
TSOP Top View
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
A12
A15
A16
NC
VCC
WE
A17
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
0677B-A鈥?/97
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
1

AT49HBV010-90TI相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    PROTECTIVE GUARD KB SER SQ&RND
  • 英文版
    COVER DUST POLY FOR KB SERIES
  • 英文版
    CENTER BARRIER BLACK POLY LB SER
  • 英文版
    PROTECTIVE GUARD FOR LB SER SQ
  • 英文版
    Round Pushbutton Switch Cap Black Slip On
  • 英文版
    Round Pushbutton Switch Cap Red Slip On
  • 英文版
    128K x 8 (1M bit), 2.7-Volt (BV)/3-Volt (LV) Read and 2.7-Vo...
  • 英文版
    1-Megabit 128K x 8 5-volt Only Flash Memory
    ATMEL
  • 英文版
    1-Megabit 128K x 8 5-volt Only Flash Memory
    ATMEL [ATM...
  • 英文版
    2-Megabit 256K x 8 5-volt Only Flash Memory
    ATMEL
  • 英文版
    2-megabit (256K x 8) 5-volt Only Flash Memory
    ATMEL [ATM...
  • 英文版
    2-Megabit 256K x 8 5-volt Only Flash Memory
    ATMEL [ATM...
  • 英文版
    4-Megabit CMOS Flash Memory
    ETC
  • 英文版
    ATMEL Corporation [4-Megabit 512K x 8/ 256K x 16 CMOS Flash...
    ATMEL
  • 英文版
    8-Megabit 5-volt Only Flash Memory
    ETC
  • 英文版
    8-Megabit 1M x 8 5-volt Only Flash Memory
    ATMEL
  • 英文版
    ATMEL Corporation [1-Megabit 128K x 8 5-volt Only CMOS Flas...
    ATMEL
  • 英文版
    ATMEL Corporation [2-Megabit 256K x 8 5-volt Only CMOS Flas...
    ATMEL
  • 英文版
    4 Megabit 512K x 8 5-volt Only CMOS Flash Memory
    ATMEL
  • 英文版
    4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
    ATMEL [ATM...

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