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AT49LV010-12VC Datasheet

  • AT49LV010-12VC

  • x8 Flash EEPROM

  • 223.88KB

  • 14頁

  • ETC

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Features
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time 鈥?55 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time 鈥?10 seconds
Byte-by-byte Programming 鈥?30 碌s/Byte typical
Hardware Data Protection
DATA Polling for end of Program Detection
Low Power Dissipation
鈥?25 mA Active Current
鈥?50 碌A(chǔ) CMOS Standby Current
鈥?/div>
Typical 10,000 Write Cycles
Description
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-
ries organized as 131,072 words of 8 bits each. Manufactured with Atmel鈥檚 advanced
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-
sipation of just 90 mW over the commercial temperature range. When the devices are
deselected, the CMOS standby current is less than 50 碌A(chǔ).
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not
require high input voltages for programming. Three-volt-only commands determine
the read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is per-
formed by erasing the entire 1 megabit of memory and then programming on a byte by
byte basis. The typical byte programming time is a fast 30 碌s. The end of a program
cycle can be optionally detected by the DATA polling feature. Once the end of a byte
program cycle has been detected, a new access for a read or program can begin.
The typical number of program and erase cycles is in excess of 10,000 cycles.
(continued)
1-megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
鈩?/div>
Flash Memory
AT49BV010
AT49HBV010
AT49LV010
AT49HLV010
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
A12
A15
A16
NC
VCC
WE
NC
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 0677E鈥?1/99
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
1

AT49LV010-12VC相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    PROTECTIVE GUARD KB SER SQ&RND
  • 英文版
    COVER DUST POLY FOR KB SERIES
  • 英文版
    CENTER BARRIER BLACK POLY LB SER
  • 英文版
    PROTECTIVE GUARD FOR LB SER SQ
  • 英文版
    Round Pushbutton Switch Cap Black Slip On
  • 英文版
    Round Pushbutton Switch Cap Red Slip On
  • 英文版
    128K x 8 (1M bit), 2.7-Volt (BV)/3-Volt (LV) Read and 2.7-Vo...
  • 英文版
    1-Megabit 128K x 8 5-volt Only Flash Memory
    ATMEL
  • 英文版
    1-Megabit 128K x 8 5-volt Only Flash Memory
    ATMEL [ATM...
  • 英文版
    2-Megabit 256K x 8 5-volt Only Flash Memory
    ATMEL
  • 英文版
    2-megabit (256K x 8) 5-volt Only Flash Memory
    ATMEL [ATM...
  • 英文版
    2-Megabit 256K x 8 5-volt Only Flash Memory
    ATMEL [ATM...
  • 英文版
    4-Megabit CMOS Flash Memory
    ETC
  • 英文版
    ATMEL Corporation [4-Megabit 512K x 8/ 256K x 16 CMOS Flash...
    ATMEL
  • 英文版
    8-Megabit 5-volt Only Flash Memory
    ETC
  • 英文版
    8-Megabit 1M x 8 5-volt Only Flash Memory
    ATMEL
  • 英文版
    ATMEL Corporation [1-Megabit 128K x 8 5-volt Only CMOS Flas...
    ATMEL
  • 英文版
    ATMEL Corporation [2-Megabit 256K x 8 5-volt Only CMOS Flas...
    ATMEL
  • 英文版
    4 Megabit 512K x 8 5-volt Only CMOS Flash Memory
    ATMEL
  • 英文版
    4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
    ATMEL [ATM...

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