鈥?/div>
鈥?5V Read
鈥?5V Reprogramming
Fast Read Access Time 鈥?55 ns
Internal Program Control and Timer
16-Kbyte Boot Block with Lockout
Fast Erase Cycle Time 鈥?10 seconds
Byte-by-byte Programming 鈥?50 碌s/Byte
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
鈥?50 mA Active Current
鈥?100 碌A(chǔ) CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F040 is a 5-volt-only in-system Flash Memory. Its 4 megabits of memory is
organized as 524,288 words by 8 bits. Manufactured with Atmel鈥檚 advanced nonvola-
tile CMOS technology, the device offers access times to 55 ns with power dissipation
of just 275 mW over the commercial temperature range. When the device is dese-
lected, the CMOS standby current is less than 100 碌A(chǔ).
The device contains a user-enabled 鈥渂oot block鈥?protection feature. The AT49F040
locates the boot block at lowest order addresses (鈥渂ottom boot鈥?.
(continued)
4-megabit
(512K x 8)
5-volt Only
Flash Memory
AT49F040
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
DIP Top View
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP Top View
Type 1
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
4
3
2
1
32
31
30
A12
A15
A16
A18
VCC
WE
A17
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 0998D鈥?3/01
1