鈥?/div>
鈥?2.7V Read
鈥?5V Program/Erase
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
鈥?One 8K Words (16K bytes) Boot Block with Programming Lockout
鈥?Two 8K Words (16K bytes) Parameter Blocks
鈥?One 488K Words (976K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 30
碌s/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
鈥?25 mA Active Current
鈥?50
碌A
CMOS Standby Current
Typical 10,000 Write Cycles
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
8-Megabit
(512K x 16)
CMOS Flash
Memory
AT49BV8192
AT49BV8192T
AT49LV8192
AT49LV8192T
Description
The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized
as 512K words of 16 bits each. Manufactured with Atmel鈥檚 advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50
碌A.
(continued)
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
RESET
V
PP
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Program/Erase Power
Supply
Data
Inputs/Outputs
No Connect
TSOP Top View
Type 1
A15
A13
A11
A9
A14
A12
A10
4
6
8
10
12
14
16
18
20
22
24
1
3
5
7
9
11
13
15
17
19
21
23
2
48
46
44
42
40
38
36
34
32
30
28
26
25
47
45
43
41
39
37
35
33
31
29
27
NC
I/O15
I/O14
I/O13
I/O12
VCC
I/O3
I/O2
I/O1
I/O0
GND
A0
CE
A16
GND
I/O7
I/O6
I/O5
I/O4
I/O11
I/O10
I/O9
I/O8
OE
SOIC (SOP)
VPP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
A8
NC
NC
WE
RESET
VPP NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
0978B-A鈥?1/97
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