鈥?/div>
鈥?Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout
鈥?Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time 鈥?15 碌s
Fast Sector Erase Time 鈥?200 ms
Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Fifteen 32K Word Sectors
Memory Plane B: Forty-eight 32K Word Sectors
Erase Suspend Capability
鈥?Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
鈥?25 mA Active
鈥?10 碌A(chǔ) Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV3218
AT49BV3218T
Description
The AT49BV3218(T) is a 2.65- to 3.3-volt 32-megabit Flash memory organized as
2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 71 sectors for erase operations. The device is offered in 48-lead TSOP and
48-ball CBGA packages. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single 2.65V power
supply, making it ideally suited for in-system programming.
Pin Configurations
Pin Name
A0 - A20
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Optional Power Supply
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
Rev. 2452D鈥揊LASH鈥?3/02
1