鈥?/div>
鈥?Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
鈥?Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time 鈥?20 碌s
Fast Sector Erase Time 鈥?300 ms
Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
鈥?Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
鈥?30 mA Active
鈥?10 碌A(chǔ) Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV1604A
AT49BV1604AT
AT49BV1614A
AT49LV1614A
AT49BV1614AT
AT49LV1614AT
Description
The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized
as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 39 sectors for erase operations. The device is offered in 48-lead TSOP and
48-ball CBGA packages. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single 2.65V power
supply, making it ideally suited for in-system programming.
Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
VCCQ
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Power Supply for Accelerated Program/Erase Operations
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
Output Power Supply
Rev. 1411F鈥揊LASH鈥?3/02
1