鈥?/div>
Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time - 120 ns
Internal Program Control and Timer
16K Bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 30 碌s/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
鈥?25 mA Active Current
鈥?50 碌A CMOS Standby Current
鈥?/div>
Typical 10,000 Write Cycles
鈥?/div>
Small Packaging
鈥?8 x 14 mm CBGA
Description
The AT49BV/LV080(T) are 3-volt-only in-system Flash Memory devices. Their 8
megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with
Atmel鈥檚 advanced nonvolatile CMOS technology, the devices offer access times to
120 ns with power dissipation of just 90 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 50
碌A.
(continued)
8-Megabit
(1M x 8)
Single 2.7-volt
Battery-Voltage
鈩?/div>
Flash Memory
AT49BV080
AT49BV080T
AT49LV080
AT49LV080T
Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
I/O0 - I/O7
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Ready/Busy Output
Data Inputs/Outputs
A19
A18
A17
A16
A15
A14
A13
A12
CE
VCC
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
TSOP Top View
Type 1
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
NC
NC
WE
OE
RDY/BUSY
I/O7
I/O6
I/O5
I/O4
VCC
GND
GND
I/O3
I/O2
I/O1
I/O0
A0
A1
A2
A3
SOIC
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
A3
A2
A1
A0
I/O0
I/O1
I/O2
I/O3
GND
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
VCC
CE
A12
A13
A14
A15
A16
A17
A18
A19
NC
NC
NC
NC
WE
OE
RDY/BUSY
I/O7
I/O6
I/O5
I/O4
VCC
CBGA
Top View
1
2
3
4
5
6
7
A
A5
B
A4
C
A6
D
A3 I/O1 NC VCC I/O4 I/O7 NC
E
A2
F
A1 I/O0 I/O2 GND I/O5 RY/BY WE
A0 I/O3 GND I/O6 OE NC
A9 RST CE A14 A16 A19
A7 A10 VCC A13 NC A18
A8 A11 NC A12 A15 A17
Rev. 0812B鈥?0/98
1
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