鈥?/div>
Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
Fast Read Access Time - 70 ns
Internal Program Control and Timer
Sector Architecture
鈥?One 16K Byte Boot Block with Programming Lockout
鈥?Two 8K Byte Parameter Blocks
鈥?Two Main Memory Blocks (96K, 128K) Bytes
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30
碌
s/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
鈥?25 mA Active Current
鈥?50
碌
A CMOS Standby Current
Typical 10,000 Write Cycles