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Single Voltage, Range 3V to 3.6V Supply
3-Volt-Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 150 ns
Low Power Dissipation
15 mA Active Current
50
碌A
CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (128 words/sector)
Internal Address and Data Latches for 128 Words
Fast Sector Program Cycle Time - 20 ms
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
1 Megabit
(64K x 16)
3-volt Only
CMOS Flash
Memory
Description
The AT29LV1024 is a 3-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16
bits. Manufactured with Atmel鈥檚 advanced nonvolatile CMOS technology, the device
offers access times to 150 ns with power dissipation of just 54 mW. When the device
is deselected, the CMOS standby current is less than 50
碌A.
The device endurance
is such that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV1024 does not require
high input voltages for programming. Three-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an
Pin Configurations
Pin Name
A0 - A15
CE
OE
WE
I/O0 - I/O15
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data
Inputs/Outputs
No Connect
Don鈥檛 Connect
(continued)
AT29LV1024
TSOP Top View
PLCC Top View
Type 1
0564A
4-63