鈥?/div>
Single Voltage, Range 3V to 3.6V Supply
3-Volt Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 200 ns
Low Power Dissipation
鈥?15 mA Active Current
鈥?40 碌A(chǔ) CMOS Standby Current
Sector Program Operation
鈥?Single Cycle Reprogram (Erase and Program)
鈥?2048 Sectors (256 bytes/sector)
鈥?Internal Address and Data Latches for 256 Bytes
Two 16K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4-Megabit
(512K x 8)
3-volt Only
256-Byte Sector
Flash Memory
AT29LV040A
Description
The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel鈥檚 advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 200 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40
=碌
A. The device
A0 - A18
CE
OE
WE
I/O0 - I/O7
NC
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
TSOP Top View
Type 1
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
Pin Name
Function
A12
A15
A16
A18
VCC
WE
A17
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Pin Configurations
PLCC Top View
Rev. 0334E鈥?3/01
1
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AT29LV040A-25JI相關(guān)型號PDF文件下載
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