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Single Voltage, Range 3V to 3.6V Supply
3-volt Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 150 ns
Low Power Dissipation
鈥?15 mA Active Current
鈥?40 碌A(chǔ) CMOS Standby Current
Sector Program Operation
鈥?Single Cycle Reprogram (Erase and Program)
鈥?2048 Sectors (256 Bytes/Sector)
鈥?Internal Address and Data Latches for 256 Bytes
Two 16K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
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4-megabit
(512K x 8)
3-volt Only
256-byte Sector
Flash Memory
AT29LV040A
Description
The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel鈥檚 advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 150 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40 碌A(chǔ). The device
endurance is such that any sector can typically be written to in excess of 10,000 times.
The programming algorithm is compatible with other devices in Atmel鈥檚 3-volt only
Flash memories.
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP Top View
Type 1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
4
3
2
1
32
31
30
A12
A15
A16
A18
VCC
WE
A17
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 0334F鈥揊LASH鈥?5/02
1
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