鈥?/div>
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time 鈥?200 ns
Low Power Dissipation
鈥?15 mA Active Current
鈥?40 碌A CMOS Standby Current
Sector Program Operation
鈥?Single Cycle Reprogram (Erase and Program)
鈥?2048 Sectors (256 Bytes/Sector)
鈥?Internal Address and Data Latches for 256 Bytes
Two 16K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time 鈥?20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Minimum Endurance 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
鈩?/div>
Flash Memory
AT29BV040A
Description
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel鈥檚 advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 200 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40 碌A. The device
Pin Configurations
Pin Name
Function
A0 - A18
CE
OE
WE
I/O0 - I/O7
NC
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
CBGA
Top View
1
2
3
4
A
TSOP Top View
Type 1
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
A7 A18 A14 A13
B
A6 A16 A17 A8
C
A5 A15 WE A9
D
A4 A12 VCC A11
E
A3 I/O0 I/O3 I/O7
F
A2 I/O1 I/O4 CE
G
A1 I/O2 I/O5 A10
H
A0 GND I/O6 OE
Rev. 0383F鈥揊LASH鈥?5/02
1
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