AT29BV010A-30TI Datasheet

IC型號：
AT29BV010A-30TI
PDF描述：
1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flas...
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494.35KB
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10頁
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AT29BV010A

Features

鈥?/div>

Single Supply Voltage, Range 2.7V to 3.6V

Single Supply for Read and Write

Software Protected Programming

Fast Read Access Time - 200 ns

Low Power Dissipation

15 mA Active Current

碌A(chǔ)

CMOS Standby Current

Sector Program Operation

Single Cycle Reprogram (Erase and Program)

1024 Sectors (128 bytes/sector)

Internal Address and Data Latches for 128-Bytes

Two 8 KB Boot Blocks with Lockout

Fast Sector Program Cycle Time - 20 ms Max.

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Ranges

1 Megabit

(128K x 8)

Single 2.7-volt

Battery-Voltage

鈩?/div>

CMOS Flash

Description

The AT29BV010A is a 2.7-volt-only in-system Flash Programmable and Erasable

Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words

by 8 bits. Manufactured with Atmel鈥檚 advanced nonvolatile CMOS EEPROM technol-

ogy, the device offers access times up to 200 ns, and a low 54 mW power dissipation.

When the device is deselected, the CMOS standby current is less than 20

碌A(chǔ).

The

device endurance is such that any sector can typically be written to in excess of

10,000 times. The programming algorithm is compatible with other devices in Atmel鈥檚

Low Voltage Flash family of products.

(continued)

AT29BV010A

Pin Configurations

Pin Name

A0 - A16

I/O0 - I/O7

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

PLCC Top View

TSOP Top View

Type 1

0519B

4-3

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AT29BV010A-30TI Datasheet

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