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AT28LV010 Datasheet

  • AT28LV010

  • 1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM

  • 9頁

  • ATMEL   ATMEL

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AT28LV010
Features
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Single 3.3V
鹵
10% Supply
Fast Read Access Time - 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation
15 mA Active Current
20
碌A(chǔ)
CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 100,000K Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
1 Megabit
(128K x 8)
Low Voltage
Paged CMOS
E
2
PROM
Description
The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program-
mable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words
by 8 bits. Manufactured with Atmel鈥檚 advanced nonvolatile CMOS technology, the
device offers access times to 200 ns with power dissipation of just 54 mW. When the
device is deselected, the CMOS standby current is less than 20
碌A(chǔ).
(continued)
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data
Inputs/Outputs
No Connect
Don鈥檛 Connect
PDIP
Top View
AT28LV010
PLCC
Top View
TSOP
Top View
0395A
2-155

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