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Fast Read Access Time - 120 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation
80 mA Active Current
300
碌A(chǔ)
CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
Single 5V
鹵
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
1 Megabit
(128K x 8)
Paged
CMOS
E
2
PROM
Military
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel鈥檚 advanced nonvolatile CMOS technology, the device offers
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Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
44 LCC
Top View
AT28C010 Mil
PGA
Top View
CERDIP, FLATPACK
Top View
32 LCC
Top View
0353C
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