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Fast Read Access Time - 120 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation
40 mA Active Current
200
碌A(chǔ)
CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
Single 5V
鹵
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
1 Megabit
(128K x 8)
Paged
CMOS
E
2
PROM
Commercial
and
Industrial
AT28C010 Com/Ind
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel鈥檚 advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 200
碌A(chǔ).
(continued)
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data
Inputs/Outputs
No Connect
Don鈥檛 Connect
Pin Configurations
TSOP
Top View
PDIP
Top View
PLCC
Top View
Note: PLCC package pin 1
is a DON鈥橳 CONNECT.
0353C
2-231