AT28BV256 Datasheet

IC型號(hào)：
AT28BV256
PDF描述：
256K (32K x 8) Battery-Voltage Parallel EEPROMs
文件大?。?/label>
255.80KB
PDF頁(yè)數(shù)：
16頁(yè)
芯片廠家：
ATMEL

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Features

鈥?/div>

Single 2.7V - 3.6V Supply

鈥?/div>

Fast Read Access Time 鈥?200 ns

鈥?/div>

Automatic Page Write Operation

鈥?/div>

鈥?Internal Address and Data Latches for 64 Bytes

鈥?Internal Control Timer

Fast Write Cycle Times

鈥?Page Write Cycle Time: 10 ms Maximum

鈥?1- to 64-byte Page Write Operation

Low Power Dissipation

鈥?15 mA Active Current

鈥?20 碌A(chǔ) CMOS Standby Current

Hardware and Software Data Protection

DATA Polling for End of Write Detection

High Reliability CMOS Technology

鈥?Endurance: 10,000 Cycles

鈥?Data Retention: 10 Years

JEDEC Approved Byte-wide Pinout

Commercial and Industrial Temperature Ranges

256K (32K x 8)

Battery-Voltage

Parallel

EEPROMs

AT28BV256

Description

The AT28BV256 is a high-performance Electrically Erasable and Programmable Read

Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel鈥檚 advanced nonvolatile CMOS technology, the device offers access

times to 200 ns with power dissipation of just 54 mW. When the device is deselected,

the CMOS standby current is less than 200 碌A(chǔ).

Pin Configurations

Pin Name

A0 - A14

I/O0 - I/O7

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

Don鈥檛 Connect

Note:

PDIP, SOIC 鈥?Top View

A14

A12

I/O0

I/O1

I/O2

GND

VCC

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

PLCC 鈥?Top View

A12

A14

VCC

A13

A11

A13

VCC

A14

A12

1. Note: PLCC package pins 1 and 17

are DON鈥橳 CONNECT.

TSOP 鈥?Top View

A11

A10

I/O7

I/O6

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O0

0273H鈥揚(yáng)EEPR鈥?0/04

型號(hào)

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AT28BV256 Datasheet

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