鈥?/div>
2.7 to 3.6V Supply
Full Read and Write Operation
Low Power Dissipation
8 mA Active Current
50
碌A(chǔ)
CMOS Standby Current
Read Access Time - 250 ns
Byte Write - 3 ms
Direct Microprocessor Control
DATA Polling
READ/BUSY Open Drain Output on TSOP
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Low Voltage CMOS Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
16K (2K x 8)
Battery-Voltage
鈩?/div>
CMOS
E
2
PROM
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel鈥檚
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
(continued)
Pin Configurations
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don鈥檛 Connect
TSOP
Top View
AT28BV16
PDIP, SOIC
Top View
PLCC
Top View
0308A
2-119
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