AT-42086-TR1 Datasheet

IC型號(hào)：
AT-42086-TR1
PDF描述：
Up to 6 GHz Medium Power Silicon Bipolar Transistor
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Up to 6 GHz Medium Power

Silicon Bipolar Transistor

Technical Data

AT-42086

Features

鈥?High Output Power:

20.5 dBm Typical P

1 dB

at 2.0 GHz

鈥?High Gain at 1 dB

Compression:

13.5 dB Typical G

1 dB

at 2.0 GHz

鈥?Low Noise Figure:

1.9 dB Typical NF

at 2.0 GHz

鈥?High Gain-Bandwidth

Product:

8.0 GHz Typical f

鈥?Surface Mount Plastic

Package

鈥?Tape-and-Reel Packaging

Option Available

[1]

BASE

420

plastic package. The 4 micron

emitter-to-emitter pitch enables

this transistor to be used in many

different functions. The 20 emitter

finger interdigitated geometry

yields a medium sized transistor

with impedances that are easy to

match for low noise and medium

power applications. Applications

include use in wireless systems as

an LNA, gain stage, buffer, oscilla-

tor, and mixer. An optimum noise

match near 50

鈩?/div>

up to 1 GHz,

makes this device easy to use as a

low noise amplifier.

The AT-42086 bipolar transistor is

fabricated using Hewlett- Packard鈥檚

10 GHz f

Self-Aligned-Transistor

(SAT) process. The die is nitride

passivated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

86 Plastic Package

Pin Connections

EMITTER

COLLECTOR

Description

Hewlett-Packard鈥檚 AT-42086 is a

general purpose NPN bipolar

transistor that offers excellent

high frequency performance. The

AT-42086 is housed in a low cost

surface mount .085" diameter

Note:

1. Refer to PACKAGING section 鈥淭ape-

and-Reel Packaging for Semiconductor

Devices.鈥?/div>

EMITTER

5965-8914E

4-174

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AT-42086-TR1 Datasheet

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