frequencies. An optimum noise
鈩?/div>
up to 1 GHz ,
makes this device easy to use as a
low noise amplifier.
The AT-42000 bipolar transistor is
fabricated using Hewlett-Packard鈥檚
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
The recommended assembly
procedure is gold-eutectic die
attach at 400
o
C and either wedge
or ball bonding using 0.7 mil gold
wire. See APPLICATIONS section,
鈥淐hip Use鈥?
Chip Outline
Description
Hewlett-Packard鈥檚 AT-42000 is a
general purpose NPN bipolar
transistor chip that offers excel-
lent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigitated
geometry yields a medium sized
transistor with impedances that
are easy to match for low noise
and medium power applications.
4-149
5965-8909E