AT-41400-GP4 Datasheet

IC型號(hào)：
AT-41400-GP4
PDF描述：
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
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Up to 6 GHz Low Noise Silicon

Bipolar Transistor Chip

Technical Data

AT-41400

Features

鈥?Low Noise Figure:

1.6 dB Typical at 2.0 GHz

3.0 dB Typical at 4.0 GHz

鈥?High Associated Gain:

14.5 dB Typical at 2.0 GHz

10.5 dB Typical at 4.0 GHz

鈥?High Gain-Bandwidth

Product:

9.0 GHz Typical f

that are easy to match for low

noise and moderate power appli-

cations. This device is designed for

use in low noise, wideband

amplifier, mixer and oscillator

applications in the VHF, UHF, and

microwave frequencies. An

optimum noise match near 50

鈩?/div>

1 GHz , makes this device easy to

use as a low noise amplifier.

The AT-41400 bipolar transistor is

fabricated using Hewlett-Packard鈥檚

10 GHz f

Self-Aligned-Transistor

(SAT) process. The die is nitride

passivated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

Chip Outline

Description

Hewlett-Packard鈥檚 AT-41400 is a

general purpose NPN bipolar

transistor chip that offers excel-

lent high frequency performance.

The 4 micron emitter-to-emitter

pitch enables this transistor to be

used in many different functions.

The 14 emitter finger interdigitated

geometry yields an intermediate

sized transistor with impedances

4-99

5965-8922E

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