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4.8 V NPN Common Emitter

Output Power Transistor

for GSM Class IV Phones

Technical Data

AT-36408

Features

鈥?4.8 Volt Pulsed Operation

(pulse width = 577

碌sec,

duty cycle = 12.5%)

鈥?+35.0 dBm P

out

@ 900 MHz,

Typ.

鈥?65% Collector Efficiency

@ 900 MHz, Typ.

鈥?9 dB Power Gain @ 900 MHz,

Typ.

鈥?Internal Input Pre-Matching

Facilitates Cascading

SOIC-8 Surface Mount

Plastic Package

Outline P8

Description

Hewlett Packard鈥檚 AT-36408

combines internal input pre-

matching with low cost, NPN

power silicon bipolar junction

transistors in a SOIC-8 surface

mount plastic package. This

device is designed for use as the

output device for GSM Class IV

handsets. At 4.8 volts, the device

features +35 dBm pulsed output

power, superior power added

efficiency, and excellent gain,

making the AT-36408 an excellent

choice for battery powered

systems.

The AT-36408 is fabricated with

Hewlett Packard鈥檚 10 GHz F

t

Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

Pin Configuration

BASE

EMITTER

1

2

3

4

8

7

6

5

BASE

EMITTER

COLLECTOR

EMITTER

Applications

鈥?Output Power Device for

GSM Class IV Handsets

COLLECTOR

EMITTER

4-81

5965-5960E

next

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