4.8 V NPN Common Emitter
Output Power Transistor
for GSM Class IV Phones
Technical Data
AT-36408
Features
鈥?4.8 Volt Pulsed Operation
(pulse width = 577
碌sec,
duty cycle = 12.5%)
鈥?+35.0 dBm P
out
@ 900 MHz,
Typ.
鈥?65% Collector Efficiency
@ 900 MHz, Typ.
鈥?9 dB Power Gain @ 900 MHz,
Typ.
鈥?Internal Input Pre-Matching
Facilitates Cascading
SOIC-8 Surface Mount
Plastic Package
Outline P8
Description
Hewlett Packard鈥檚 AT-36408
combines internal input pre-
matching with low cost, NPN
power silicon bipolar junction
transistors in a SOIC-8 surface
mount plastic package. This
device is designed for use as the
output device for GSM Class IV
handsets. At 4.8 volts, the device
features +35 dBm pulsed output
power, superior power added
efficiency, and excellent gain,
making the AT-36408 an excellent
choice for battery powered
systems.
The AT-36408 is fabricated with
Hewlett Packard鈥檚 10 GHz F
t
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
Pin Configuration
BASE
EMITTER
1
2
3
4
8
7
6
5
BASE
EMITTER
COLLECTOR
EMITTER
Applications
鈥?Output Power Device for
GSM Class IV Handsets
COLLECTOR
EMITTER
4-81
5965-5960E