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4.8 V NPN Common Emitter

Output Power Transistor

for AMPS, ET ACS Phones

Technical Data

AT-33225

Features

鈥?4.8 Volt Operation

鈥?+31.0 dBm P

out

@ 900 MHz,

Typ.

鈥?70% Collector Efficiency

@ 900 MHz, Typ.

鈥?9 dB Power Gain @ 900 MHz,

Typ.

鈥?-29 dBc IMD

3

@ P

out

of

24 dBm per tone, 900 MHz,

Typ.

鈥?Internal Input Pre-Matching

Facilitates Cascading

鈥?50% Smaller than SOT-223

Package

MSOP-3 Surface Mount

Plastic Package

Outline 25

Description

Hewlett Packard鈥檚 AT-33225 is a

low cost, NPN power silicon

bipolar junction transistor housed

in a miniature MSOP-3 surface

mount plastic package. This

device is designed for use as an

output device for AMPS and

ETACS mobile phones. The

AT-33225 features over 1 watt

CW output power when operated

at 4.8 volts. Excellent gain and

superior efficiency make the

AT-33225 ideal for use in battery

powered systems.

The AT-33225 is fabricated with

Hewlett Packard鈥檚 10 GHz F

t

Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

Pin Configuration

COLLECTOR

4

EMITTER

1

2

BASE

3

EMITTER

Applications

鈥?Output Power Device for

AMPS and ETACS Handsets

鈥?900 MHz ISM

4-71

5965-5910E

next

AT-33225-TR1相關(guān)型號PDF文件下載

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  Voltage Variable Absorptive Attenuator DC - 2 GHz
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  英文版
  Voltage Variable Absorptive Attenuator DC2 GHz
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  英文版
  Voltage Variable Absorptive Attenuator DC - 2 GHz
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  Voltage Variable Absorptive Attenuator DC2 GHz
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  GaAs Digital Attenuator, 31 dB, 5 Bit DC - 2 GHz
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  英文版
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  英文版
  1 Bit, 10 dB, GaAs Digital Atten 0.02 - 2 GHz
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