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AT-31625-TR1 Datasheet

  • AT-31625-TR1

  • 4.8 V NPN Common Emitter Medium Power Output Transistor

  • 10頁

  • AGILENT   AGILENT

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4.8 V NPN Common Emitter
Medium Power Output Transistor
Technical Data
AT-31625
Features
鈥?4.8 Volt Operation
鈥?+28.0 dBm P
out
@ 900 MHz,
Typ.
鈥?70% Collector Efficiency
@ 900 MHz, Typ.
鈥?9 dB Power Gain @ 900 MHz,
Typ.
鈥?-31 dBc IMD
3
@ P
out
of
21 dBm per Tone, 900 MHz,
Typ.
鈥?50% Smaller than SOT-223
Package
MSOP-3 Surface Mount
Plastic Package
Outline 25
Description
Hewlett Packard鈥檚 AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica-
tion. The AT-31625 features
+28 dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.
The AT-31625 is fabricated with
Hewlett Packard鈥檚 10 GHz F
t
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
Pin Configuration
COLLECTOR
4
Applications
鈥?Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN
鈥?Output Power Device for
ISM 900, Cordless, WLAN
EMITTER 1
2
3 EMITTER
BASE
4-43
5965-5911E

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