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AT-31033-TR1 Datasheet

  • AT-31033-TR1

  • Low Current, High Performance NPN Silicon Bipolar Transistor

  • 10頁

  • AGILENT   AGILENT

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Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-31011
AT-31033
Features
鈥?High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
鈥?900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB G
A
AT-31033: 0.9 dB NF, 11 dB G
A
鈥?Characterized for End-Of-
Life Battery Use (2.7 V)
鈥?SOT-143 SMT Plastic
Package
鈥?Tape-And-Reel Packaging
Option Available
[1]
Description
Hewlett-Packard鈥檚 AT-31011 and
AT-31033 are high performance
NPN bipolar transistors that have
been optimized for operation at
low voltages, making them ideal
for use in battery powered
applications in wireless markets.
The AT-31033 uses the 3 lead
SOT-23, while the AT-31011 places
the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standards
compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a mul-
tiplicity of tasks. The 10 emitter
finger interdigitated geometry
yields an extremely fast transistor
with low operating currents and
reasonable impedances.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.9 GHz, and 2.4 GHz
Outline Drawing
EMITTER COLLECTOR
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Applications
include cellular and PCS handsets
as well as Industrial-Scientific-
Medical systems. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 11 dB or more
associated gain at a 2.7 V, 1 mA
bias. Moderate output power
capability (+9 dBm P
1dB
) coupled
with an excellent noise figure
yields high dynamic range for a
microcurrent device. High gain
capability at 1 V, 1 mA makes these
devices a good fit for 900 MHz
pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard鈥檚
10 GHz f
T
, 30 GHz f
max
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
310
BASE
EMITTER
SOT-143 (AT-31011)
COLLECTOR
310
BASE
EMITTER
SOT-23 (AT-31033)
Note:
1. Refer to 鈥淭ape-and-Reel Packaging for
Semiconductor Devices鈥?/div>
4-33
5965-8919E

AT-31033-TR1相關(guān)型號PDF文件下載

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  • 英文版
    Voltage Variable Absorptive Attenuator， 19 dB DC2 GHz
    ETC
  • 英文版
    Fixed Attenuators (SMA Type)
    HRS
  • 英文版
    Fixed Attenuators (SMA Type)
    HIROSE [Hi...
  • 英文版
    Fixed Attenuators (SMA Type)
    HRS
  • 英文版
    Fixed Attenuators (SMA Type)
    HIROSE [Hi...
  • 英文版
    Voltage Variable Absorptive Attenuator， 19 dB DC2 GHz
    ETC
  • 英文版
    Analog Attenuator
    ETC
  • 英文版
    Fixed Attenuators (SMA Type)
    HRS
  • 英文版
    Fixed Attenuators (SMA Type)
    HIROSE [Hi...
  • 英文版
    Fixed Attenuators (SMA Type)
    HRS
  • 英文版
    Fixed Attenuators (SMA Type)
    HIROSE [Hi...
  • 英文版
    Voltage Variable Absorptive Attenuator DC - 2 GHz
    MA-COM
  • 英文版
    Voltage Variable Absorptive Attenuator DC - 2 GHz
    MACOM [Tyc...
  • 英文版
    Voltage Variable Absorptive Attenuator DC2 GHz
    ETC
  • 英文版
    Voltage Variable Absorptive Attenuator DC - 2 GHz
    MACOM [Tyc...
  • 英文版
    Analog Attenuator
    ETC
  • 英文版
    Voltage Variable Absorptive Attenuator DC2 GHz
    ETC
  • 英文版
    GaAs Digital Attenuator, 31 dB, 5 Bit DC - 2 GHz
    MA-COM
  • 英文版
    GaAs Digital Attenuator, 31 dB, 5 Bit DC - 2 GHz
    MACOM [Tyc...
  • 英文版
    1 Bit, 10 dB, GaAs Digital Atten 0.02 - 2 GHz
    MA-COM

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