AS6WA25616-TI Datasheet

IC型號(hào)：
AS6WA25616-TI
PDF描述：
3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with o...
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208.94KB
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ETC

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September 2001

聤

AS6WA25616

3.0V to 3.6V 256K脳16 Intelliwatt鈩?low-power CMOS SRAM with one chip enable

Features

鈥?AS6WA25616

鈥?Intelliwatt鈩?active power circuitry

鈥?Industrial and commercial temperature ranges available

鈥?Organization: 262,144 words 脳 16 bits

鈥?3.0V to 3.6V at 55 ns

鈥?Low power consumption: ACTIVE

- 144 mW at 3.6V and 55 ns

鈥?1.5V data retention

鈥?Equal access and cycle times

鈥?Easy memory expansion with CS, OE inputs

鈥?Smallest footprint packages

鈥?ESD protection

鈮?/div>

2000 volts

鈥?Latch-up current

鈮?/div>

200 mA

- 48-ball FBGA

- 400-mil 44-pin TSOP 2

鈥?Low power consumption: STANDBY

- 72 碌W max at 3.6V

Pin arrangement (top view)

44-pin 400-mil TSOP 2

I/O16

I/O1

I/O15

I/O2

I/O14

I/O3

I/O13

I/O4

I/O5

I/O12

I/O6

I/O11

I/O7

I/O10

I/O8

I/O9

A17

A16

A10

A15

A14

A11

A13

A12

48-CSP Ball-Grid-Array Package

Logic block diagram

A12

A13

I/O1鈥揑/O8

I/O9鈥揑/O16

Row Decoder

256K 脳 16

Array

(4,194,304)

I/O

buffer

Control circuit

Column decoder

A10

A11

A14

A15

A16

A17

I/O9

I/O10

I/O15

I/O16

I/O11 A5

I/O12 A17

I/O13 NC

I/O14 A14

A12

A16

A15

A13

A10

I/O2

I/O4

I/O5

I/O6

A11

I/O1

I/O3

I/O7

I/O8

Selection guide

Range

Product

AS6WA25616

Min

(V)

3.0

Typ

(V)

3.3

Max

(V)

3.6

Speed

(ns)

Power Dissipation

Operating (I

)

Max (mA)

Standby (I

SB1

)

Max (

碌

7/9/02; v.1.3

Alliance Semiconductor

P. 1 of 9

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