AS4C1M16F5
廬
5V 1M脳16 CMOS DRAM (fast-page mode)
Features
鈥?Organization: 1,048,576 words 脳 16 bits
鈥?High speed
- 50/60 ns
RAS
access time
- 20/25 ns fast page cycle time
- 13/17 ns
CAS
access time
鈥?Low power consumption
- Active:
880 mW max (AS4C1M16E0-60)
- Standby: 11 mW max, CMOS DQ
鈥?Fast page mode
鈥?1024 refresh cycles, 16 ms refresh interval
-
RAS
-only or
CAS
-before-
RAS
refresh
鈥?Read-modify-write
鈥?TTL-compatible, three-state DQ
鈥?JEDEC standard package and pinout
- 400 mil, 42-pin SOJ
- 400 mil, 44/50-pin TSOP II
鈥?5V power supply
鈥?Industrial and commercial temperature available
Pin arrangement
SOJ
Vcc
DQ1
DQ2
DQ3
DQ4
Vcc
DQ5
DQ6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Pin designation
TSOP II
V
SS
DQ16
DQ15
DQ14
DQ13
Pin(s)
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
Description
Address inputs
Row address strobe
Input/output
Output enable
Write enable
Column address strobe, upper byte
Column address strobe, lower byte
Power
Ground
V
SS
DQ12
DQ11
DQ7
DQ8
NC
NC
WE
RAS
NC
NC
A0
A1
DQ10
DQ9
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
V
CC
DQ1
DQ2
DQ
3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
A0 to A9
RAS
DQ1 to DQ16
OE
WE
UCAS
LCAS
NC
NC
WE
RAS
A2
A3
Vcc
A4
V
SS
NC
NC
A0
A1
A2
A3
V
CC
15
16
17
18
19
20
21
22
23
24
25
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
V
CC
V
SS
A9
A8
A7
A6
A5
A4
V
SS
Selection guide
Symbol
Maximum
RAS
access time
Maximum column address access time
Maximum
CAS
access time
Maximum output enable (
OE
) access time
Minimum read or write cycle time
Minimum fast page mode cycle time
Maximum operating current
Maximum CMOS standby current
t
RAC
t
AA
t
CAC
t
OEA
t
RC
t
PC
I
CC1
I
CC5
AS4C1M16F5-50
50
25
13
13
84
20
170
2.0
AS4C1M16F5-60
60
30
17
15
104
25
160
2.0
Unit
ns
ns
ns
ns
ns
ns
mA
mA
4/11/01; v.0.9.1
Alliance Semiconductor
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