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AS29F200 Datasheet

  • AS29F200

  • 5V 256K x 8/128K x 8 CMOS FLASH EEPROM

  • 20頁

  • ALSC

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鈥?Organization: 256K脳8 or 128K脳16
鈥?Sector architecture
- One 16K; two 8K; one 32K; and three 64K byte sectors
- Boot code sector architecture鈥擳 (top) or B (bottom)
- Erase any combination of sectors or full chip
鈥?Single 5.0鹵0.5V power supply for read/write operations
鈥?Sector protection
鈥?High speed 55/70/90/120 ns address access time
鈥?Automated on-chip programming algorithm
- Automatically programs/verifies data at specified ad-
dress
鈥?Automated on-chip erase algorith
- Automatically preprograms/erases chip or specified sec-
tors
鈥?10,000 write/erase cycle endurance
鈥?Hardware RESET pin
- Resets internal state machine to read mode
鈥?Low power consumption
- 20 mA typical read current
- 30 mA typical program current
- 300 碌A(chǔ) typical standby current
- 1 碌A(chǔ) typical standby current (RESET = 0)
鈥?JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO
鈥?Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
- RY/BY output
鈥?Erase suspend/resume
- Supports reading data from a sector not being erased
鈥?Low V
CC
write lock-out below 2.8V
/RJLF#EORFN#GLDJUDP
RY/BY
V
CC
V
SS
RESET
Program/erase
control
Command
register
CE
OE
A-1
Program voltage
generator
Chip enable
Output enable
Logic
STB
Data latch
Sector protect
switches
Erase voltage
generator
DQ0鈥揇Q15
3LQ#DUUDQJHPHQW
48-pin TSOP
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
RY/BY
NC
NC
A7
A6
A5
A4
A3
A2
A1
NC
RY/BY
NC
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
44-pin SO
Input/output
buffers
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
AS29F200
AS29F200
WE
BYTE
)/$6+
)/$6+
)/$6+
)/$6+
V
CC
detector
Timer
Address latch
STB
Y decoder
Y gating
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X decoder
Cell matrix
A16
BYTE
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
V
SS
CE
A0
A0鈥揂16
6HOHFWLRQ#JXLGH
29F200-55
Maximum access time
Maximum chip enable access time
Maximum output enable access time
t
AA
t
CE
t
OE
55
55
25
29F200-70
70
70
30
29F200-90
90
90
35
29F200-120 Unit
120
120
50
ns
ns
ns
','#4407333<0$1#72:233
$//,$1&(#6(0,&21'8&725
4
Copyright 漏1998 Alliance Semiconductor. All rights reserved.

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