ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF676
Repetitive voltage up to
Mean forward current
Surge current
4800
V
1515
A
18
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[擄C]
Value
Unit
BLOCKING
V
RRM
V
RSM
I
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
V=VRRM
140
140
140
4800
4900
100
V
V
mA
CONDUCTING
I
I
I
F (AV)
Mean forward current
Mean forward current
Surge forward current
I虜 t
Forward voltage
Threshold voltage
Forward slope resistance
180擄 sin ,50 Hz, Th=55擄C, double side cooled
180擄 square,50 Hz,Th=55擄C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
140
1515
1535
18
1620 x1E3
A
A
kA
A虜s
V
V
mohm
F (AV)
FSM
I虜 t
V
FM
V
F(TO)
r
F
Forward current =
1570 A
25
140
140
2.4
1.25
0.500
SWITCHING
t rr
Q rr
I rr
s
V
FR
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
di/dt=
400 A/碌s
140
I F = 1000 A
di/dt=
VR =
250 A/碌s
100 V
800
0.5
40
V
A
140
6
2000
碌s
碌C
MOUNTING
R
th(j-h)
T
F
j
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
18
-30 / 140
22.0 / 24.5
300
擄C/kW
擄C
kN
g
ORDERING INFORMATION : ARF676 S 48
standard specification
VRRM/100
1
2
3
4
