ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF612
Repetitive voltage up to
Mean forward current
Surge current
1500
V
425
A
4
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[擄C]
Value
Unit
BLOCKING
V
RRM
V
RSM
I
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
V=VRRM
150
150
150
1500
1600
40
V
V
mA
CONDUCTING
I
I
I
F (AV)
Mean forward current
Mean forward current
Surge forward current
I虜 t
Forward voltage
Threshold voltage
Forward slope resistance
180擄 sin ,50 Hz, Th=55擄C, double side cooled
180擄 square,50 Hz,Th=55擄C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
150
425
425
3.8
72 x1E3
A
A
kA
A虜s
V
V
mohm
F (AV)
FSM
I虜 t
V
FM
V
F(TO)
r
F
Forward current =
1000 A
25
150
150
2.6
1.15
1.141
SWITCHING
t rr
Q rr
I rr
s
V
FR
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
di/dt=
400 A/碌s
150
IF=
di/dt=
VR =
200 A
50 A/碌s
100 V
105
0.4
9
V
A
150
4
210
碌s
碌C
MOUNTING
R
th(j-h)
T
F
j
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
95
-30 / 150
4.5 / 5.0
55
擄C/kW
擄C
kN
g
ORDERING INFORMATION : ARF612 S 15
standard specification
VRRM/100
1
2
3
4
