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ARF448B Datasheet

  • ARF448B

  • N-CHANNEL ENHANCEMENT MODE

  • 4頁

  • ADPOW

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D
G
S
TO-247
ARF448A
ARF448B
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V
250W
65MHz
The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
鈥?/div>
Specified 150 Volt, 40.68 MHz Characteristics:
鈥?/div>
Output Power = 250 Watts.
鈥?/div>
Gain = 15dB (Class C)
鈥?/div>
Efficiency = 75%
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
胃JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25擄C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25擄C
Junction to Case
鈥?/div>
Low Cost Common Source RF Package.
鈥?/div>
Very High Breakdown for Improved Ruggedness.
鈥?/div>
Low Thermal Resistance.
鈥?/div>
Nitride Passivated Die for Improved Reliability.
All Ratings: T
C
= 25擄C unless otherwise specified.
ARF448A/448B
UNIT
Volts
450
450
15
鹵30
230
0.55
-55 to 150
300
Amps
Volts
Watts
擄C/W
擄C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
碌A(chǔ))
1
MIN
TYP
MAX
UNIT
Volts
450
3
25
250
鹵100
5
2
8.5
5
nA
mhos
Volts
碌A(chǔ)
V
DS
(ON) On State Drain Voltage
I
DSS
I
GSS
g
fs
V
GS
(TH)
(I
D
(ON) = 7.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
=
鹵30V,
V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 7.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy B芒t B4 Parc Cad茅ra Nord
050-4908 Rev B

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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
    ADPOW
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
    ADPOW [Adv...
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
    ADPOW
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
    ADPOW [Adv...
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
    ADPOW
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
    ADPOW [Adv...
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    N-CHANNEL ENHANCEMENT MODE
    ADPOW
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    N-CHANNEL ENHANCEMENT MODE
    ADPOW [Adv...
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