DATA SHEET
COMPOUND TRANSISTOR
AQ1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?High current drives such as IC and motor solenoid available up
to 2 A
鈥?On-chip bias resistor
鈥?Low power consumption during drive
AQ1 SERIES LISTS
Products
AQ1L2N
AQ1A3M
AQ1F3M
AQ1F3P
AQ1L2Q
AQ1F2Q
AQ1A4A
R
1
(K鈩?
0.47
1.0
2.2
2.2
0.47
0.22
鈭?/div>
R
2
(K鈩?
1.0
1.0
2.2
10
4.7
2.2
10
Electrode Connection
1. Emitter
EIAJ : SC-43B
2. Collector JEDEC: TO-92
3. Base
IEC
: PA33
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
鈭?0
鈭?0
鈭?0
鈭?.0
鈭?.0
鈭?.04
750
150
鈭?5
to +150
Unit
V
V
V
A
A
A
mW
擄C
擄C
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10840EJ2V0DS00 (2nd edition)
Printed in Japan
漏
2002
1998
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