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POWER MOS IV
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
APT8090BN 800V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: T
C
= 25擄C unless otherwise specified.
APT
8075BN
APT
8090BN
UNIT
Volts
Amps
800
13
56
鹵30
310
2.48
800
12
48
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
Volts
Watts
W/擄C
擄C
-55 to 150
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
碌A(chǔ))
On State Drain Current
2
MIN
APT8075BN
APT8090BN
APT8075BN
APT8090BN
APT8075BN
APT8090BN
TYP
MAX
UNIT
Volts
800
800
13
Amps
I
D
(ON)
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
2
12
0.75
Ohms
R
DS
(ON)
0.90
250
1000
鹵100
2
4
碌A(chǔ)
nA
Volts
I
DSS
I
GSS
V
GS
(TH)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
=
鹵30V,
V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0mA)
THERMAL CHARACTERISTICS
Symbol
R
胃JC
R
胃JA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
擄C/W
050-8007 Rev C
0.40
40
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy B芒t B4 Parc Cad茅ra Nord
1
2
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