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APT5510LFLL Datasheet

  • APT5510LFLL

  • Volts:550V RDS(ON)0.1Ohms ID(cont):49Amps|FREDFETs ( fast bo...

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APT5510B2FLL
APT5510LFLL
550V 49A 0.100
W
POWER MOS 7
TM
FREDFET
B2FLL
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
鈥?Lower Input Capacitance
鈥?Increased Power Dissipation
鈥?Lower Miller Capacitance
鈥?Easier To Drive
鈥?Lower Gate Charge, Qg
鈥?Popular
T-MAX鈩?/div>
or TO-264 Package
鈥?/div>
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
T-MAX鈩?/div>
TO-264
LFLL
D
G
S
All Ratings: T
C
= 25擄C unless otherwise specified.
APT5510
UNIT
Volts
Amps
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L
A
IC
N
H
C
E ION
T T
E A
C M
N R
VA FO
D N
A
I
49
196
鹵30
鹵40
568
4.55
300
49
35
(Repetitive and Non-Repetitive)
1
4
550
Volts
Watts
W/擄C
擄C
Amps
mJ
-55 to 150
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250碌A(chǔ))
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
550
49
0.100
250
1000
鹵100
3
5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
碌A(chǔ)
nA
Volts
050-7189 Rev - 4-2002
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
= 鹵30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61

APT5510LFLL相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    ADPOW [Adv...
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    Power MOS V is a new generation of high voltage N-Channel en...
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    Power MOS V is a new generation of high voltage N-Channel en...
    ADPOW
  • 英文版
    Power MOS V is a new generation of high voltage N-Channel en...
    ADPOW [Adv...
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    Power MOS V is a new generation of high voltage N-Channel en...
    ADPOW
  • 英文版
    Power MOS V is a new generation of high voltage N-Channel en...
    ADPOW [Adv...
  • 英文版
    Power MOS V is a new generation of high voltage N-Channel en...
    ADPOW
  • 英文版
    Power MOS V is a new generation of high voltage N-Channel en...
    ADPOW [Adv...
  • 英文版
    Power MOS 7TM is a new generation of low loss, high voltage,...
    ADPOW
  • 英文版
    Power MOS 7TM is a new generation of low loss, high voltage,...
    ADPOW [Adv...
  • 英文版
    Power MOS 7TM is a new generation of low loss, high voltage,...
    ADPOW [Adv...
  • 英文版
    Power MOS V is a new generation of high voltage N-Channel en...
    ADPOW

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