鈩?/div>
POWER MOS IV
鈥?Faster Switching
鈥?Low Gate Charge
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Avalanche Rated
鈥?Popular TO-254 Package
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
鈥?100% Avalanche Tested
鈥?Similar to the 2N7228, JX2N7228 and JV2N7228
All Ratings: T
C
= 25擄C unless otherwise specified.
APT5040CNR
UNIT
Volts
Amps
500
13
52
鹵30
鹵40
150
1.2
-55 to 150
300
13
20
3
1
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/擄C
擄C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
800
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250碌A)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
500
13
0.40
250
1000
鹵100
2
4
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
碌A
nA
Volts
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
=
鹵30V,
V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5016 Rev -
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy B芒t B4 Parc Cad茅ra Nord
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