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AAT9512 Datasheet

  • AAT9512

  • 28V N-Channel Power MOSFET

  • 6頁

  • ANALOGICTECH

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28V N-Channel Power MOSFET
General Description
The AAT9512 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTech鈩?s ultra high density MOSFET
process and space saving small outline J-lead pack-
age, performance superior to that normally found in
a TSOP-6 footprint has been squeezed into the foot-
print of a SC70 package.
AAT9512
Features
鈥?/div>
鈥?/div>
鈥?/div>
V
DS(MAX)
= 28V
I
D(MAX)
1
= 4.5A @ 25擄C
Low R
DS(ON)
:
鈥?48 m鈩?@ V
GS
= 4.5V
鈥?76 m鈩?@ V
GS
= 2.5V
SC70JW-8 Package
Applications
鈥?/div>
鈥?/div>
鈥?/div>
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
D
8
Preliminary Information
Top View
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25擄C unless otherwise noted)
Value
28
鹵12
鹵4.5
鹵3.6
鹵20
1.2
1.6
1.0
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150 C
1
Units
V
T
A
= 25擄C
T
A
= 70擄C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25擄C
T
A
= 70擄C
Operating Junction and Storage Temperature Range
W
擄C
Thermal Characteristics
Symbol
R
胃JA
R
胃JA2
R
胃JF
Description
Typical Junction-to-Ambient steady state
1
Maximum Junction-to-Ambient t<5 seconds
Typical Junction-to-Foot
1
1
Value
102
78
35
Units
擄C/W
擄C/W
擄C/W
9512.2003.04.0.61
1

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