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AAT9060INY-T1 Datasheet

  • AAT9060INY-T1

  • 30V N-Channel Power MOSFET

  • 135.37KB

  • 6頁

  • ANALOGICTECH

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30V N-Channel Power MOSFET
General Description
The AAT9060 30V N-Channel Power MOSFET is a
member of AnalogicTech鈩?s TrenchDMOS鈩?/div>
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
AAT9060
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
PWMSwitch
鈩?/div>
V
DS(MAX)
= 30V
I
D(MAX)
1
= 39A @ T
C
= 25擄C
I
APP(MAX)
= 12.5A in typical computer application
Low R
DS(ON)
:
鈥?16 m鈩?@V
GS
= 10V
鈥?27 m鈩?@V
GS
= 4.5V
Applications
鈥?/div>
鈥?/div>
鈥?/div>
DC-DC converters
High current load switches
LDO output
DPAK Package
Drain-Connected Tab
Preliminary Information
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
C
=25擄C unless otherwise noted)
Value
30
鹵20
鹵39
鹵31
鹵60
20
41
26
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150擄C
1
Units
V
T
C
= 25擄C
T
C
= 70擄C
Pulsed Drain Current
3
Continuous Source Current (Source-Drain Diode)
1
T
C
= 25擄C
Maximum Power Dissipation
1
T
C
= 70擄C
Operating Junction and Storage Temperature Range
A
W
擄C
Thermal Characteristics
Symbol
R
胃JA
R
TYP
R
胃JC
Description
Maximum Junction-to-Ambient
Typical Junction to ambient on PC board
Maximum Junction-to-Case
2
Value
96
24
3
Units
擄C/W
擄C/W
擄C/W
9060.2003.05.0.9
1

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