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AAT7357ITS-T1 Datasheet

  • AAT7357ITS-T1

  • 20V P-Channel Power MOSFET

  • 209.04KB

  • 6頁

  • ANALOGICTECH

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20V P-Channel Power MOSFET
General Description
The AAT7357 is a low threshold dual MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech鈩?s ultra high density
MOSFET process and space saving small outline J-
lead package, performance superior to that normal-
ly found in a TSSOP-8 footprint has been squeezed
into the footprint of a TSOPJW-8 package.
AAT7357
Features
鈥?/div>
鈥?/div>
鈥?/div>
V
DS(MAX)
= -20V
I
D(MAX)
1
= -5A @ 25擄C
Low R
DS(ON)
:
鈥?39 m鈩?@ V
GS
= -4.5V
鈥?63 m鈩?@ V
GS
= -2.5V
Dual TSOPJW-8 Package
Advanced Information
Applications
鈥?/div>
鈥?/div>
鈥?/div>
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
D1
8
Top View
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25擄C unless otherwise noted)
Value
-20
鹵12
鹵5
鹵4
鹵12
-1.3
1.6
1.0
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150擄C
1
Units
V
T
A
= 25擄C
T
A
= 70擄C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25擄C
T
A
= 70擄C
W
擄C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
胃JA
R
胃JA2
R
胃JF
Description
Junction-to-Ambient steady state, one FET on
Junction-to-Ambient t<5 seconds
1
Junction-to-Foot
1
1
Typ
115
64
60
Max
140
78
72
Units
擄C/W
擄C/W
擄C/W
7357.2003.08.0.6
1

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