鈩?/div>
(typical) at V
CC
= 5 V
s
Break-before-make switching
s
High noise immunity
s
ESD protection:
x
HBM EIA/JESD22-A114-B exceeds 2000 V
x
MM EIA/JESD22-A115-A exceeds 200 V
s
CMOS low-power consumption
s
Latch-up performance meets requirements of JESD 78 Class I
s
Direct interface with TTL levels
s
Control input accepts voltages up to 5 V
s
Multiple package options
s
Speci鏗乪d from
鈭?0 擄C
to +85
擄C
and from
鈭?0 擄C
to +125
擄C
3. Quick reference data
Table 1:
Quick reference data
GND = 0 V; t
r
= t
f
鈮?/div>
2.5 ns; minimum and maximum values at T
amb
=
鈭?/div>
40
擄
C to +85
擄
C; typical
values at T
amb
= 25
擄
C.
Symbol
t
PZH
, t
PZL
Parameter
turn-on time S to Bn
Conditions
C
L
= 50 pF; R
L
= 500
鈩?/div>
V
CC
= 3.3 V
V
CC
= 5.0 V
t
PHZ
, t
PLZ
turn-off time S to Bn
C
L
= 50 pF; R
L
= 500
鈩?/div>
V
CC
= 3.3 V
V
CC
= 5.0 V
0.5
0.8
3.6
2.9
4.5
3.5
ns
ns
0.5
0.5
4.0
3.0
5.5
4.0
ns
ns
Min
Typ
Max
Unit
next