74AUP1G79
Low-power D-type 鏗俰p-鏗俹p; positive-edge trigger
Rev. 01 鈥?12 September 2005
Product data sheet
1. General description
The 74AUP1G79 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully speci鏗乪d for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging back鏗俹w current through
the device when it is powered down.
The 74AUP1G79 provides the single positive-edge triggered D-type 鏗俰p-鏗俹p. Information
on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock
pulse. The D input must be stable one set-up time prior to the LOW-to-HIGH clock
transition for predictable operation.
2. Features
s
Wide supply voltage range from 0.8 V to 3.6 V
s
High noise immunity
s
Complies with JEDEC standards:
x
JESD8-12 (0.8 V to 1.3 V)
x
JESD8-11 (0.9 V to 1.65 V)
x
JESD8-7 (1.2 V to 1.95 V)
x
JESD8-5 (1.8 V to 2.7 V)
x
JESD8-B (2.7 V to 3.6 V)
s
ESD protection:
x
HBM JESD22-A114-C exceeds 2000 V
x
MM JESD22-A115-A exceeds 200 V
x
CDM JESD22-C101-C exceeds 1000 V
s
Low static power consumption; I
CC
= 0.9
碌A(chǔ)
(maximum)
s
Latch-up performance exceeds 100 mA per JESD 78 Class II
s
Inputs accept voltages up to 3.6 V
s
Low noise overshoot and undershoot < 10 % of V
CC
s
I
OFF
circuitry provides partial Power-down mode operation
s
Multiple package options
s
Speci鏗乪d from
鈭?0 擄C
to +85
擄C
and
鈭?0 擄C
to +125
擄C