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66116-202 Datasheet

  • 66116-202

  • Single Channel Optocoupler Electrically Similar to 4N47-4N49...

  • 90.07KB

  • 2頁

  • MII

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Single Channel Optocoupler
66116
Electrically Similar to 4N47-4N49
Coaxial or Bulkhead Mount packages
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
鈥?/div>
鈥?/div>
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High reliability
Base lead provided for conventional transistor
biasing
Very high gain, high voltage transistor
Hermetically sealed for reliability and stability
Stability over wide temperature range
High voltage electrical isolation
Applications:
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鈥?/div>
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Line Receivers
Switchmode Power Supplies
Signal ground isolation
Process Control input/output isolation
DESCRIPTION
Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a
hermetically sealed metal case. These devices can be tested to customer specifications, as well as to MIL-PRF-38534 H&K
quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................
1kV
Collector-Base Voltage ........................................................................................................................................................... 45V
Collector-Emitter Voltage (See Note 1) .................................................................................................................................. 40V
Emitter-Base Voltage................................................................................................................................................................ 7V
Input Diode Reverse Voltage.................................................................................................................................................... 2V
Input Diode Continuous Forward Current at (or below) 65擄C Free-Air Temperature (see note 2) ....................................40mA
Continuous Collector Current ..............................................................................................................................................50mA
Peak Diode Current (See Note 3)............................................................................................................................................. 1A
Continuous Transistor Power Dissipation at (or below) 25擄C Free-Air Temperature (see Note 4) ................................300mW
Operating Free-Air Temperature Range ............................................................................................................-55擄C to +125擄C
Storage Temperature..........................................................................................................................................-65擄C to +125擄C
Lead Temperature (1/16鈥?(1.6mm) from case for 10 seconds).......................................................................................... 240擄C
* JEDEC registered data
Package Dimensions
Base
Collector
Emitter
Case Lead
Schematic Diagram
A
C
E
Case Lead
K
ANODE
CATHODE
B
Notes:
1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero.
2. Derate linearly to 125擄C free-air temperature at the rate of 0.67 mA/擄C.
3. This value applies for t
w
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1us. PRR<300 pps.
4. Derate linearly to 125擄C free-air temperature at the rate of 3 mW/擄C.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
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725 E. Walnut St., Garland, TX 75040
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(972) 272-3571
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Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
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