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66099-401 Datasheet

  • 66099-401

  • HIGH VOLTAGE RADIATION TOLERANT OPTOCOUPLER

  • 2頁

  • MII

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HIGH VOLTAGE
66099-4XX
Rev A
9\25\02
RADIATION TOLERANT OPTOCOUPLER
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
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Designed to meet or exceed MIL-PRF-19500
radiation requirements
High Current Transfer Ratio - 200% typical
1kVdc electrical input to output isolation
Base lead provided for conventional transistor
biasing
150 V Breakdown voltage
Applications:
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Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
The
66099-4XX
optocoupler consists of a 660 nm GaAIAs LED optically coupled to a high voltage photodiode driving a
high voltage transistor mounted in a hermetic TO-5 package. This configuration has proven to be highly tolerant to both
proton and total dose radiation.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65擄C to +150擄C
Operating Free-Air Temperature Range ............................................................................................................-55擄C to +100擄C
Lead Solder Temperature (1/16鈥?(1.6mm) from case for 5 seconds) ................................................................................ 240擄C
Input Diode Forward DC Current.........................................................................................................................................40mA
Input Power Dissipation (see Note 1)................................................................................................................................80mW
Reverse Input Voltage ............................................................................................................................................................. 3V
Collector-Base Voltage .........................................................................................................................................................150V
Collector-Emitter Voltage .....................................................................................................................................................150V
Emitter-Base Voltage................................................................................................................................................................ 6V
Continuous Collector Current ............................................................................................................................................300mA
Continuous Transistor Power Dissipation (see Note 2)...................................................................................300mW
Notes:
1. Derate linearly 0.80 mW/擄C above 25擄C.
2. Derate linearly 3.0 mW/擄C above 25擄C.
Package Dimensions
Schematic Diagram
0.040 [1.02]
MAX.
6 LEADS
脴0.016 [0.41]
脴0.019 [0.48]
5
5
6
7
1
A
C
3
0.305 [7.75]
0.335 [8.51]
0.370 [9.40]
0.336 [8.51]
0.500 [12.70]
MIN.
0.155 [3.94]
0.185 [4.70]
脴0.200 [5.08]
3
2
0.045 [1.14]
0.029 [0.73]
45擄
0.034 [0.864]
0.028 [0.711]
7
K
E
B
1
2
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
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725 E. Walnut St., Garland, TX 75040
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(972) 272-3571
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Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
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