Bay Linear
Inspire the Linear Power
N-Channel Field Effect Transistor
4N600(3600)
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for high voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
鈥?/div>
鈥?/div>
鈥?/div>
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low R
DS(ON)
V
DSS
= 600V
R
DS (ON)
= 1.9
鈩?/div>
I
D
= 4.0A
Ordering Information
Device
4N600T
4N600S
Package
TO-220
TO-263 ( D
2
)
Temp.
0 to 150擄C
0 to 150擄C
Absolute Maximum Rating
Symbol
I
D
(T
C
=25擄C)
I
D
(T
C
=100擄C)
V
GSV
P
D
T
J
T
STG
Parameter
Drain Current
-Continues
-Pulsed
Gate Source Voltage
Total Power Dissipation @ T
C
=25擄C
Derate above 25擄C
Operating and Storage
Temperature Range
Max
4.0
2.5
16
鹵20
75
0.59
-55 to 150
Unit
A
V
W
W/擄C
擄
擄
C
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
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